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IGBT-Power-Modul
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SEMIKRON SKKT460/22E H4 2300V IGBT Module High-Performance Insulated Gate Bipolar Transistor

SEMIKRON SKKT460/22E H4 2300V IGBT Module High-Performance Insulated Gate Bipolar Transistor

Markenbezeichnung: SEMIKRON
Modellnummer: SKKT460/22E
MOQ: 1
Preis: Verhandlungsfähig
Einzelheiten
Herkunftsort:
Deutschland
Anodenspannung:
2200 V
Ununterbrochener Kollektorstrom:
460 A
Pulsstrom:
920 A
Leckstrom:
5 Ma
Verpackung Informationen:
Neue Originalverpackung
Beschreibung des Produkts
SEMIKRON SKKT460/22E H4 2300V IGBT Module
The SEMIKRON SKKT460/22E H4 is a high-performance Insulated Gate Bipolar Transistor (IGBT) module that combines MOSFET high input impedance with bipolar transistor low conduction loss for precise, efficient power control in demanding industrial applications.
Key Specifications
Parameter Value
Maximum Voltage Rating 2300V
Continuous Current Capacity 460A (at 85°C case temperature)
Operating Temperature Range -40°C to 125°C (junction and storage)
Housing Type SEMIPACK® 5 with aluminum nitride ceramic insulated metal baseplate
Technical Features
  • Fast and flexible switching with low switching losses
  • Excellent surge overload capability
  • High insulation voltage for harsh high-voltage environments
  • Precious metal pressure contacts for long-term reliability
  • Efficient heat dissipation design
  • UL-recognized design (File No. E63532)
Applications
This IGBT module is ideal for AC motor soft starters, input converters for AC inverter drives, DC motor control (machine tools), temperature control for ovens and chemical processes, power regulators, welding equipment, and renewable energy conversion systems.
Compact, durable, and easy to integrate, the SEMIKRON SKKT460/22E H4 IGBT module delivers consistent, efficient power control backed by SEMIKRON's renowned quality—ideal for industrial systems demanding uncompromising performance and flexibility.
SEMIKRON SKKT460/22E H4 2300V IGBT Module High-Performance Insulated Gate Bipolar Transistor 0